The vdW interactions enhance/suppress the carrier mobilities in two-dimensional GaN-BAs/SiS vdW heterostructure
The carrier mobility of two-dimensional (2D) materials can be modulated by van der Waals (vdW) interactions in conjunction with structure factors. This paper presents a comprehensive theoretical investigation of the intrinsic carrier mobilities of the flattened 2D GaN-BAs vdW heterostructure (2D GaN...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0271463 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|