Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface
Abstract Ultrafast charge‐carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two‐color pump‐probe reflectivity measurements. The carrier‐induced reflectivity signal exhibits a resonant enhancement at a pump‐photon energy of 1.4 eV, which is assigned...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-04-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400573 |
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| author | Gerson Mette Kunie Ishioka Steven Youngkin Wolfgang Stolz Kerstin Volz Ulrich Höfer |
| author_facet | Gerson Mette Kunie Ishioka Steven Youngkin Wolfgang Stolz Kerstin Volz Ulrich Höfer |
| author_sort | Gerson Mette |
| collection | DOAJ |
| description | Abstract Ultrafast charge‐carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two‐color pump‐probe reflectivity measurements. The carrier‐induced reflectivity signal exhibits a resonant enhancement at a pump‐photon energy of 1.4 eV, which is assigned to an optical transition at the interface. In addition, the transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the oscillation, in combination with the characteristic wavelength‐dependencies of its frequency and its initial phase, strongly indicates that the 2‐THz mode is a difference‐combination mode between a GaP‐like and a Si‐like phonon at the heterointerface and that the corresponding second‐order Raman scattering process can be enhanced by a double resonance involving the interfacial electronic states. |
| format | Article |
| id | doaj-art-a0ffd228a7ec464db17acea8e3be496a |
| institution | DOAJ |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-a0ffd228a7ec464db17acea8e3be496a2025-08-20T03:17:55ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-04-01127n/an/a10.1002/admi.202400573Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) HeterointerfaceGerson Mette0Kunie Ishioka1Steven Youngkin2Wolfgang Stolz3Kerstin Volz4Ulrich Höfer5Faculty of Physics and Materials Sciences Center Philipps‐Universität Marburg 35032 Marburg GermanyNational Institute for Materials Science Tsukuba 305‐0047 JapanFaculty of Physics and Materials Sciences Center Philipps‐Universität Marburg 35032 Marburg GermanyFaculty of Physics and Materials Sciences Center Philipps‐Universität Marburg 35032 Marburg GermanyFaculty of Physics and Materials Sciences Center Philipps‐Universität Marburg 35032 Marburg GermanyFaculty of Physics and Materials Sciences Center Philipps‐Universität Marburg 35032 Marburg GermanyAbstract Ultrafast charge‐carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two‐color pump‐probe reflectivity measurements. The carrier‐induced reflectivity signal exhibits a resonant enhancement at a pump‐photon energy of 1.4 eV, which is assigned to an optical transition at the interface. In addition, the transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the oscillation, in combination with the characteristic wavelength‐dependencies of its frequency and its initial phase, strongly indicates that the 2‐THz mode is a difference‐combination mode between a GaP‐like and a Si‐like phonon at the heterointerface and that the corresponding second‐order Raman scattering process can be enhanced by a double resonance involving the interfacial electronic states.https://doi.org/10.1002/admi.202400573buried heterointerfacecoherent phononsexperimentGaP/Si(001)interface phononpump‐probe |
| spellingShingle | Gerson Mette Kunie Ishioka Steven Youngkin Wolfgang Stolz Kerstin Volz Ulrich Höfer Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface Advanced Materials Interfaces buried heterointerface coherent phonons experiment GaP/Si(001) interface phonon pump‐probe |
| title | Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface |
| title_full | Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface |
| title_fullStr | Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface |
| title_full_unstemmed | Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface |
| title_short | Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface |
| title_sort | interface specific excitation of coherent phonons at the buried gap si 001 heterointerface |
| topic | buried heterointerface coherent phonons experiment GaP/Si(001) interface phonon pump‐probe |
| url | https://doi.org/10.1002/admi.202400573 |
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