Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface

Interface‐Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface

Abstract Ultrafast charge‐carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two‐color pump‐probe reflectivity measurements. The carrier‐induced reflectivity signal exhibits a resonant enhancement at a pump‐photon energy of 1.4 eV, which is assigned...

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Bibliographic Details
Main Authors: Gerson Mette, Kunie Ishioka, Steven Youngkin, Wolfgang Stolz, Kerstin Volz, Ulrich Höfer
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Materials Interfaces
Subjects:
buried heterointerface
coherent phonons
experiment
GaP/Si(001)
interface phonon
pump‐probe
Online Access:https://doi.org/10.1002/admi.202400573
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https://doi.org/10.1002/admi.202400573

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