Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)

Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)

Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices. To achieve this, high‐quality hBN with controlled atomic configurations must be able to form pristine interfaces with various mater...

Full description

Saved in:
Bibliographic Details
Main Authors: Ju‐Hyun Jung, Chao Zhao, Seong‐Jun Yang, Jun‐Ho Park, Woo‐Ju Lee, Su‐Beom Song, Jonghwan Kim, Chan‐Cuk Hwang, Seung‐Hwa Baek, Feng Ding, Cheol‐Joo Kim
Format: Article
Language:English
Published: Wiley-VCH 2024-12-01
Series:Small Structures
Subjects:
chemical vapor deposition
epitaxy
hexagonal boron nitride
hydrogen passivations
single crystal
van der Waals assembly
Online Access:https://doi.org/10.1002/sstr.202400297
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1002/sstr.202400297

Similar Items