Development of High-FOM SiC PiN Diodes
Based on Silvaco simulations, it obtained an optimized structure design of 3 300 V SiC PiN diode and developed SiC etching process and ohmic contact process. SiC PiN diode with 48 ° slant angle of bevel mesa structure and 10-5 Ω·cm2 contact resistivity of metal/4H-SiC ohmic contact was fabricated. B...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.011 |
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