A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process
This paper introduces a high-gain wideband power amplifier (PA) designed for V-band applications, operating across 52 to 65 GHz. The proposed PA design employs a combination of techniques, including pole-gain distribution, base-capacitive peaking, and the parallel configuration of multiple small-siz...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-08-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/9/1077 |
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| author | Jianing Hu Jialong Wan Yi Shen Wei Zhao Jiang Luo |
| author_facet | Jianing Hu Jialong Wan Yi Shen Wei Zhao Jiang Luo |
| author_sort | Jianing Hu |
| collection | DOAJ |
| description | This paper introduces a high-gain wideband power amplifier (PA) designed for V-band applications, operating across 52 to 65 GHz. The proposed PA design employs a combination of techniques, including pole-gain distribution, base-capacitive peaking, and the parallel configuration of multiple small-sized transistors. These strategies enable significant bandwidth extension while maintaining high gain, substantial output power, and a compact footprint. A two-stage PA using the combination technique was developed and fabricated in a 130 nm SiGe BiCMOS process. The PA prototype achieved a peak gain of 27.3 dB at 64 GHz, with a 3 dB bandwidth exceeding 13 GHz and a fractional bandwidth greater than 22.2%. It delivered a maximum saturated output power of 19.7 dBm and an output 1 dB compression point of 18 dBm. Moreover, the PA chip occupied a total silicon area of 0.57 mm<sup>2</sup>, including all testing pads with a compact core size of 0.198 mm<sup>2</sup>. |
| format | Article |
| id | doaj-art-9faa083df9994b659c7991b5d66943b0 |
| institution | OA Journals |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-9faa083df9994b659c7991b5d66943b02025-08-20T01:55:41ZengMDPI AGMicromachines2072-666X2024-08-01159107710.3390/mi15091077A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS ProcessJianing Hu0Jialong Wan1Yi Shen2Wei Zhao3Jiang Luo4School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Microelectronics, South China University of Technology, Guangzhou 511442, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaThis paper introduces a high-gain wideband power amplifier (PA) designed for V-band applications, operating across 52 to 65 GHz. The proposed PA design employs a combination of techniques, including pole-gain distribution, base-capacitive peaking, and the parallel configuration of multiple small-sized transistors. These strategies enable significant bandwidth extension while maintaining high gain, substantial output power, and a compact footprint. A two-stage PA using the combination technique was developed and fabricated in a 130 nm SiGe BiCMOS process. The PA prototype achieved a peak gain of 27.3 dB at 64 GHz, with a 3 dB bandwidth exceeding 13 GHz and a fractional bandwidth greater than 22.2%. It delivered a maximum saturated output power of 19.7 dBm and an output 1 dB compression point of 18 dBm. Moreover, the PA chip occupied a total silicon area of 0.57 mm<sup>2</sup>, including all testing pads with a compact core size of 0.198 mm<sup>2</sup>.https://www.mdpi.com/2072-666X/15/9/1077millimeter-wave (mm-wave)SiGe BiCMOSbandwidth extensionpower amplifier |
| spellingShingle | Jianing Hu Jialong Wan Yi Shen Wei Zhao Jiang Luo A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process Micromachines millimeter-wave (mm-wave) SiGe BiCMOS bandwidth extension power amplifier |
| title | A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process |
| title_full | A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process |
| title_fullStr | A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process |
| title_full_unstemmed | A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process |
| title_short | A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process |
| title_sort | v band wideband power amplifier with high gain in a 130 nm sige bicmos process |
| topic | millimeter-wave (mm-wave) SiGe BiCMOS bandwidth extension power amplifier |
| url | https://www.mdpi.com/2072-666X/15/9/1077 |
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