A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process

A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process

This paper introduces a high-gain wideband power amplifier (PA) designed for V-band applications, operating across 52 to 65 GHz. The proposed PA design employs a combination of techniques, including pole-gain distribution, base-capacitive peaking, and the parallel configuration of multiple small-siz...

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Bibliographic Details
Main Authors: Jianing Hu, Jialong Wan, Yi Shen, Wei Zhao, Jiang Luo
Format: Article
Language:English
Published: MDPI AG 2024-08-01
Series:Micromachines
Subjects:
millimeter-wave (mm-wave)
SiGe BiCMOS
bandwidth extension
power amplifier
Online Access:https://www.mdpi.com/2072-666X/15/9/1077
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