Synthesis of Silicon-Germanium Film Alloys Based on Chemically Formed Porous Silicon Layers
Formation of silicon-germanium alloy films by electrochemically filling a porous silicon matrix with germanium and subjecting it to rapid thermal processing at 950 °C in argon flow is investigated. Low-porosity porous silicon layers are obtained using metal-assisted chemical etching of lightly-doped...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2025-04-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/4107 |
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