Effect of P-well Interconnection in Dummy Trench Area on Properties of Trench IGBT

Effect of P-well Interconnection in Dummy Trench Area on Properties of Trench IGBT

1 700 V trench IGBT with a design of strip-cells and dummy trench structure was developed based on the trench gate key processes in 8 inch fabrication. In dummy trench structure area, the effect of P-well interconnection types on IGBT’s static/ dynamic performance and safe operation area were studie...

Full description

Saved in:
Bibliographic Details
Main Authors: LUO Haihui, XIAO Qiang, YU Wei, YANG Xinzhu, TAN Canjian, HUANG Jianwei, LIU Guoyou
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2016-01-01
Series:机车电传动
Subjects:
trench IGBT
P-well in dummy trench structure
hole concentration
safe operation area
switching-off dV/dt
Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2016.03.010
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2016.03.010

Similar Items