Nitridation Process Optimization of 4H-SiC Gate Oxidation
In order to improve the quality of SiO2 film and interface state density of SiC MOS capacitor, the impact of nitridation process parameters on the properties of gate oxide was discussed by orthogonal experimental method, which included temperature, pressure, time and NO gas flow,etc. The results dem...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.008 |
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