Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model
Abstract Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. He...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2025-03-01
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| Series: | Nano Convergence |
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| Online Access: | https://doi.org/10.1186/s40580-025-00480-7 |
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| _version_ | 1850251762805506048 |
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| author | Hye Rim Kim Tae Jun Seok Tae Jung Ha Jeong Hwan Song Kyun Seong Dae Sang Gil Lee Hyun Seung Choi Su Yong Park Byung Joon Choi Jae Hyuck Jang Soo Gil Kim Tae Joo Park |
| author_facet | Hye Rim Kim Tae Jun Seok Tae Jung Ha Jeong Hwan Song Kyun Seong Dae Sang Gil Lee Hyun Seung Choi Su Yong Park Byung Joon Choi Jae Hyuck Jang Soo Gil Kim Tae Joo Park |
| author_sort | Hye Rim Kim |
| collection | DOAJ |
| description | Abstract Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO2 selector unit. The structural and electrical characteristics of an As-embedded SiO2 selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO2 matrix and energy band alignment between the As cluster and charged oxygen vacancies in SiO2. Consequently, practical control strategies for the TS behavior are proposed with a pulse scheme applicable to actual device operation. The proposed TS operational mechanism and analytical methodology can contribute to interpreting and integrating various memory/selector components, thereby advancing their operational and integrative research. Graphical abstract |
| format | Article |
| id | doaj-art-9d8c5857dd60424ea48136f7f73a2c54 |
| institution | OA Journals |
| issn | 2196-5404 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano Convergence |
| spelling | doaj-art-9d8c5857dd60424ea48136f7f73a2c542025-08-20T01:57:49ZengSpringerOpenNano Convergence2196-54042025-03-0112111110.1186/s40580-025-00480-7Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy modelHye Rim Kim0Tae Jun Seok1Tae Jung Ha2Jeong Hwan Song3Kyun Seong Dae4Sang Gil Lee5Hyun Seung Choi6Su Yong Park7Byung Joon Choi8Jae Hyuck Jang9Soo Gil Kim10Tae Joo Park11Department of Materials Science and Chemical Engineering, Hanyang UniversityDepartment of Materials Science and Chemical Engineering, Hanyang UniversitySK hynix Inc.SK hynix Inc.Electron Microscopy Research Group, Korea Basic Science Institute (KBSI)Electron Microscopy Research Group, Korea Basic Science Institute (KBSI)Department of Materials Science and Chemical Engineering, Hanyang UniversityDepartment of Materials Science and Chemical Engineering, Hanyang UniversityDepartment of Materials Science and Engineering, Seoul National University of Science and TechnologyElectron Microscopy Research Group, Korea Basic Science Institute (KBSI)SK hynix Inc.Department of Materials Science and Chemical Engineering, Hanyang UniversityAbstract Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. Here, we propose a highly coherent selector via in-depth investigation of the operation process of a fab-friendly As-SiO2 selector unit. The structural and electrical characteristics of an As-embedded SiO2 selector are analyzed, and the TS-on and -off operational mechanism is presented. Further, the critical control elements governing the selector operation are identified, including the electron charging into the oxygen vacancies in the SiO2 matrix and energy band alignment between the As cluster and charged oxygen vacancies in SiO2. Consequently, practical control strategies for the TS behavior are proposed with a pulse scheme applicable to actual device operation. The proposed TS operational mechanism and analytical methodology can contribute to interpreting and integrating various memory/selector components, thereby advancing their operational and integrative research. Graphical abstracthttps://doi.org/10.1186/s40580-025-00480-7Selector deviceCrossbar arrayThreshold switchingMechanismCharged oxygen vacancyPulse scheme |
| spellingShingle | Hye Rim Kim Tae Jun Seok Tae Jung Ha Jeong Hwan Song Kyun Seong Dae Sang Gil Lee Hyun Seung Choi Su Yong Park Byung Joon Choi Jae Hyuck Jang Soo Gil Kim Tae Joo Park Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model Nano Convergence Selector device Crossbar array Threshold switching Mechanism Charged oxygen vacancy Pulse scheme |
| title | Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model |
| title_full | Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model |
| title_fullStr | Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model |
| title_full_unstemmed | Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model |
| title_short | Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model |
| title_sort | electronic threshold switching of as embedded sio2 selectors charged oxygen vacancy model |
| topic | Selector device Crossbar array Threshold switching Mechanism Charged oxygen vacancy Pulse scheme |
| url | https://doi.org/10.1186/s40580-025-00480-7 |
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