Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model

Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model

Abstract Sneak current issues in crossbar arrays of non-volatile memories can be effectively alleviated using threshold switching (TS)-based selectors. However, 1-selector–1-resistor integration requires coherence between the constituent materials and operational parameters of the two components. He...

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Main Authors: Hye Rim Kim, Tae Jun Seok, Tae Jung Ha, Jeong Hwan Song, Kyun Seong Dae, Sang Gil Lee, Hyun Seung Choi, Su Yong Park, Byung Joon Choi, Jae Hyuck Jang, Soo Gil Kim, Tae Joo Park
Format: Article
Language:English
Published: SpringerOpen 2025-03-01
Series:Nano Convergence
Subjects:
Selector device
Crossbar array
Threshold switching
Mechanism
Charged oxygen vacancy
Pulse scheme
Online Access:https://doi.org/10.1186/s40580-025-00480-7
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https://doi.org/10.1186/s40580-025-00480-7

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