Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction
It is well known that the size of deep ultraviolet (DUV) micro LED (μLEDs) decreases, although bandwidth improves, the optical power drops sharply, severely limiting the application of DUV μLEDs in optical communication. This study focused on the fabrication of DUV μLED with 10 μm × 10 μm dimenstion...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-01-01
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| Series: | Next Nanotechnology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2949829525000488 |
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| author | Yun-Cheng Hsu Ching-Ho Tien Yun-Han Chang Sunanda Mitra Sankesh Shetty Sébastien Chenot Mohamed Al Khalfioui Hao-Chung Kuo Chi-Wai Chow Chia-Yen Huang Julien Brault Ray-Hua Horng |
| author_facet | Yun-Cheng Hsu Ching-Ho Tien Yun-Han Chang Sunanda Mitra Sankesh Shetty Sébastien Chenot Mohamed Al Khalfioui Hao-Chung Kuo Chi-Wai Chow Chia-Yen Huang Julien Brault Ray-Hua Horng |
| author_sort | Yun-Cheng Hsu |
| collection | DOAJ |
| description | It is well known that the size of deep ultraviolet (DUV) micro LED (μLEDs) decreases, although bandwidth improves, the optical power drops sharply, severely limiting the application of DUV μLEDs in optical communication. This study focused on the fabrication of DUV μLED with 10 μm × 10 μm dimenstion, utilizing molecular beam epitaxy (MBE) technology to grow AlGaN quantum dots (QD) and improve the stress in the quantum dot structure through stress engineering, thereby enhancing the light emission efficiency. To improve the ohmic contact in the p-type region, a tunneling structure is designed and incorporated, which helps increase carrier injection efficiency and further optimize the electrical performance of device. Additionally, by combining neutral particle beam etching (NBE) technology, the μLED is precisely processed, suppressing the processing damage that typically reduces light emission efficiency in conventional dry etching methods. Test results demonstrate that the integration of these technologies significantly improves the optoelectronic properties of the DUV μLED with 10 μm × 10 μm dimenstion, providing a reliable technical solution for DUV communication applications. |
| format | Article |
| id | doaj-art-9c425806838342d9940488cdcd66b2d7 |
| institution | OA Journals |
| issn | 2949-8295 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Next Nanotechnology |
| spelling | doaj-art-9c425806838342d9940488cdcd66b2d72025-08-20T02:10:03ZengElsevierNext Nanotechnology2949-82952025-01-01710017910.1016/j.nxnano.2025.100179Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junctionYun-Cheng Hsu0Ching-Ho Tien1Yun-Han Chang2Sunanda Mitra3Sankesh Shetty4Sébastien Chenot5Mohamed Al Khalfioui6Hao-Chung Kuo7Chi-Wai Chow8Chia-Yen Huang9Julien Brault10Ray-Hua Horng11Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROCDepartment of Electrical Engineering, Tunghai University, Taichung City 407224, Taiwan, ROCDepartment of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROCUniversité Côte d’Azur, CNRS, CRHEA, rue Bernard Grégory, Sophia Antipolis 06905, FranceUniversité Côte d’Azur, CNRS, CRHEA, rue Bernard Grégory, Sophia Antipolis 06905, FranceUniversité Côte d’Azur, CNRS, CRHEA, rue Bernard Grégory, Sophia Antipolis 06905, FranceUniversité Côte d’Azur, CNRS, CRHEA, rue Bernard Grégory, Sophia Antipolis 06905, FranceDepartment of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROCDepartment of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROCDepartment of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROCUniversité Côte d’Azur, CNRS, CRHEA, rue Bernard Grégory, Sophia Antipolis 06905, FranceInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden; Corresponding author at: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC.It is well known that the size of deep ultraviolet (DUV) micro LED (μLEDs) decreases, although bandwidth improves, the optical power drops sharply, severely limiting the application of DUV μLEDs in optical communication. This study focused on the fabrication of DUV μLED with 10 μm × 10 μm dimenstion, utilizing molecular beam epitaxy (MBE) technology to grow AlGaN quantum dots (QD) and improve the stress in the quantum dot structure through stress engineering, thereby enhancing the light emission efficiency. To improve the ohmic contact in the p-type region, a tunneling structure is designed and incorporated, which helps increase carrier injection efficiency and further optimize the electrical performance of device. Additionally, by combining neutral particle beam etching (NBE) technology, the μLED is precisely processed, suppressing the processing damage that typically reduces light emission efficiency in conventional dry etching methods. Test results demonstrate that the integration of these technologies significantly improves the optoelectronic properties of the DUV μLED with 10 μm × 10 μm dimenstion, providing a reliable technical solution for DUV communication applications.http://www.sciencedirect.com/science/article/pii/S2949829525000488DUV Micro-LEDNeutral particle beam etchingOptical wireless communication |
| spellingShingle | Yun-Cheng Hsu Ching-Ho Tien Yun-Han Chang Sunanda Mitra Sankesh Shetty Sébastien Chenot Mohamed Al Khalfioui Hao-Chung Kuo Chi-Wai Chow Chia-Yen Huang Julien Brault Ray-Hua Horng Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction Next Nanotechnology DUV Micro-LED Neutral particle beam etching Optical wireless communication |
| title | Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction |
| title_full | Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction |
| title_fullStr | Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction |
| title_full_unstemmed | Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction |
| title_short | Performance study of UV micro-LEDs with AlGaN quantum dots and transparent tunnel junction |
| title_sort | performance study of uv micro leds with algan quantum dots and transparent tunnel junction |
| topic | DUV Micro-LED Neutral particle beam etching Optical wireless communication |
| url | http://www.sciencedirect.com/science/article/pii/S2949829525000488 |
| work_keys_str_mv | AT yunchenghsu performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT chinghotien performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT yunhanchang performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT sunandamitra performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT sankeshshetty performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT sebastienchenot performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT mohamedalkhalfioui performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT haochungkuo performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT chiwaichow performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT chiayenhuang performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT julienbrault performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction AT rayhuahorng performancestudyofuvmicroledswithalganquantumdotsandtransparenttunneljunction |