Polarity dependent predictable and random resistive switching in forming-free unipolar memristors
Polycrystalline, hexagonal HoMnO3 thin films sandwiched between an un-patterned Pt/Ti bottom electrode and a circularly patterned Al top electrode reveal forming-free, polarity dependent predictable and random, unipolar resistive switching with stable retention, and a resistance ratio between high r...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0226262 |
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| author | Venkata Rao Rayapati Sahitya Varma Vegesna Vinayak Jayram Bhat Daniel Blaschke Marco Diegel Andrea Dellith Jan Dellith Danilo Bürger Ilona Skorupa Heidemarie Schmidt |
| author_facet | Venkata Rao Rayapati Sahitya Varma Vegesna Vinayak Jayram Bhat Daniel Blaschke Marco Diegel Andrea Dellith Jan Dellith Danilo Bürger Ilona Skorupa Heidemarie Schmidt |
| author_sort | Venkata Rao Rayapati |
| collection | DOAJ |
| description | Polycrystalline, hexagonal HoMnO3 thin films sandwiched between an un-patterned Pt/Ti bottom electrode and a circularly patterned Al top electrode reveal forming-free, polarity dependent predictable and random, unipolar resistive switching with stable retention, and a resistance ratio between high resistance state (HRS) and low resistance state (LRS) larger than 104. An equivalent circuit model is proposed to describe the HoMnO3 memristor as a three-layered capacitor structure. Based on the energy band diagram of the HoMnO3 structure under applied negative and positive write bias, polarity dependent, predictable, and random resistive switching is explained. Furthermore, the conductance in LRS until RESET and in HRS until SET has been investigated. The conductance in LRS is large and constant until RESET bias is reached. The conductance in HRS increases from nearly zero to quantum conductance G0 (2e2/h) until SET bias is reached. |
| format | Article |
| id | doaj-art-9b8bcdf5c218431fadec4899de85e634 |
| institution | Kabale University |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-9b8bcdf5c218431fadec4899de85e6342025-02-03T16:40:43ZengAIP Publishing LLCAIP Advances2158-32262025-01-01151015313015313-1110.1063/5.0226262Polarity dependent predictable and random resistive switching in forming-free unipolar memristorsVenkata Rao Rayapati0Sahitya Varma Vegesna1Vinayak Jayram Bhat2Daniel Blaschke3Marco Diegel4Andrea Dellith5Jan Dellith6Danilo Bürger7Ilona Skorupa8Heidemarie Schmidt9Leibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, GermanyLeibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf e.V., 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf e.V., 01328 Dresden, GermanyLeibniz Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, GermanyPolycrystalline, hexagonal HoMnO3 thin films sandwiched between an un-patterned Pt/Ti bottom electrode and a circularly patterned Al top electrode reveal forming-free, polarity dependent predictable and random, unipolar resistive switching with stable retention, and a resistance ratio between high resistance state (HRS) and low resistance state (LRS) larger than 104. An equivalent circuit model is proposed to describe the HoMnO3 memristor as a three-layered capacitor structure. Based on the energy band diagram of the HoMnO3 structure under applied negative and positive write bias, polarity dependent, predictable, and random resistive switching is explained. Furthermore, the conductance in LRS until RESET and in HRS until SET has been investigated. The conductance in LRS is large and constant until RESET bias is reached. The conductance in HRS increases from nearly zero to quantum conductance G0 (2e2/h) until SET bias is reached.http://dx.doi.org/10.1063/5.0226262 |
| spellingShingle | Venkata Rao Rayapati Sahitya Varma Vegesna Vinayak Jayram Bhat Daniel Blaschke Marco Diegel Andrea Dellith Jan Dellith Danilo Bürger Ilona Skorupa Heidemarie Schmidt Polarity dependent predictable and random resistive switching in forming-free unipolar memristors AIP Advances |
| title | Polarity dependent predictable and random resistive switching in forming-free unipolar memristors |
| title_full | Polarity dependent predictable and random resistive switching in forming-free unipolar memristors |
| title_fullStr | Polarity dependent predictable and random resistive switching in forming-free unipolar memristors |
| title_full_unstemmed | Polarity dependent predictable and random resistive switching in forming-free unipolar memristors |
| title_short | Polarity dependent predictable and random resistive switching in forming-free unipolar memristors |
| title_sort | polarity dependent predictable and random resistive switching in forming free unipolar memristors |
| url | http://dx.doi.org/10.1063/5.0226262 |
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