Polarity dependent predictable and random resistive switching in forming-free unipolar memristors

Polycrystalline, hexagonal HoMnO3 thin films sandwiched between an un-patterned Pt/Ti bottom electrode and a circularly patterned Al top electrode reveal forming-free, polarity dependent predictable and random, unipolar resistive switching with stable retention, and a resistance ratio between high r...

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Bibliographic Details
Main Authors: Venkata Rao Rayapati, Sahitya Varma Vegesna, Vinayak Jayram Bhat, Daniel Blaschke, Marco Diegel, Andrea Dellith, Jan Dellith, Danilo Bürger, Ilona Skorupa, Heidemarie Schmidt
Format: Article
Language:English
Published: AIP Publishing LLC 2025-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0226262
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