Polarity dependent predictable and random resistive switching in forming-free unipolar memristors
Polycrystalline, hexagonal HoMnO3 thin films sandwiched between an un-patterned Pt/Ti bottom electrode and a circularly patterned Al top electrode reveal forming-free, polarity dependent predictable and random, unipolar resistive switching with stable retention, and a resistance ratio between high r...
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Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2025-01-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0226262 |
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