Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide
Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2012/439617 |
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