Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation
Point defects were controllably introduced into 270 nm AlGaN Light-Emitting Diodes (LEDs) by 5 MeV electron and 1.1 MeV proton irradiations to examine the effect on electrical and luminescent characteristics. The 5 MeV electron irradiations had only a marginal effect on the charge distribution, curr...
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AIP Publishing LLC
2024-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0231390 |
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| author | A. Y. Polyakov L. A. Alexanyan I. V. Schemerov A. A. Vasilev A. V. Chernykh Anton Ivanov Nadezhda Talnishnikh Anton Chernyakov A. L. Zakgeim N. M. Shmidt P. B. Lagov A. S. Doroshkevich R. Sh. Isayev Yu. S. Pavlov Hsiao-Hsuan Wan Fan Ren S. J. Pearton |
| author_facet | A. Y. Polyakov L. A. Alexanyan I. V. Schemerov A. A. Vasilev A. V. Chernykh Anton Ivanov Nadezhda Talnishnikh Anton Chernyakov A. L. Zakgeim N. M. Shmidt P. B. Lagov A. S. Doroshkevich R. Sh. Isayev Yu. S. Pavlov Hsiao-Hsuan Wan Fan Ren S. J. Pearton |
| author_sort | A. Y. Polyakov |
| collection | DOAJ |
| description | Point defects were controllably introduced into 270 nm AlGaN Light-Emitting Diodes (LEDs) by 5 MeV electron and 1.1 MeV proton irradiations to examine the effect on electrical and luminescent characteristics. The 5 MeV electron irradiations had only a marginal effect on the charge distribution, current flow, and electroluminescence of LEDs for electron fluences up to 4.5 × 1016 e/cm2 that cause very strong degradation in green, blue, and near-UV LEDs. This lack of changes is attributed to the much higher charge densities in quantum-wells (QWs) and quantum barriers (QBs) of the 270 nm LEDs and to higher bond strength in high Al mole fraction AlGaN layers. By contrast, irradiation with 1.1 MeV protons with a fluence of 1016 p/cm2 leads to more than two orders of magnitude decrease in charge density in the QWs and QBs, a strong increase in the series resistance, and the emergence of deep electron traps near Ec-0.5 eV. The difference is explained by a much higher density of primary defects produced by protons. The observed effects are compared to changes in performance caused by aging after high driving current. |
| format | Article |
| id | doaj-art-9b241d205f19480aba428b23316791bd |
| institution | DOAJ |
| issn | 2166-532X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-9b241d205f19480aba428b23316791bd2025-08-20T02:51:23ZengAIP Publishing LLCAPL Materials2166-532X2024-12-011212121121121121-1010.1063/5.0231390Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiationA. Y. Polyakov0L. A. Alexanyan1I. V. Schemerov2A. A. Vasilev3A. V. Chernykh4Anton Ivanov5Nadezhda Talnishnikh6Anton Chernyakov7A. L. Zakgeim8N. M. Shmidt9P. B. Lagov10A. S. Doroshkevich11R. Sh. Isayev12Yu. S. Pavlov13Hsiao-Hsuan Wan14Fan Ren15S. J. Pearton16Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Moscow, Leninsky pr. 4, Moscow 119049, RussiaDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Moscow, Leninsky pr. 4, Moscow 119049, RussiaDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Moscow, Leninsky pr. 4, Moscow 119049, RussiaDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Moscow, Leninsky pr. 4, Moscow 119049, RussiaDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Moscow, Leninsky pr. 4, Moscow 119049, RussiaSubmicron Heterostructures for Microelectronics Research and Engineering Center RAS, 26 Politekhnicheskaya, St Petersburg 194021, RussiaSubmicron Heterostructures for Microelectronics Research and Engineering Center RAS, 26 Politekhnicheskaya, St Petersburg 194021, RussiaSubmicron Heterostructures for Microelectronics Research and Engineering Center RAS, 26 Politekhnicheskaya, St Petersburg 194021, RussiaSubmicron Heterostructures for Microelectronics Research and Engineering Center RAS, 26 Politekhnicheskaya, St Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, RussiaDepartment of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISIS, Moscow, Leninsky pr. 4, Moscow 119049, RussiaJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Moscow Region 141980, Russian FederationJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, Moscow Region 141980, Russian FederationLaboratory of Radiation Technologies, A. N. Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences (IPCE RAS), Moscow 119071, RussiaDepartment of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USADepartment of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USADepartment of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USAPoint defects were controllably introduced into 270 nm AlGaN Light-Emitting Diodes (LEDs) by 5 MeV electron and 1.1 MeV proton irradiations to examine the effect on electrical and luminescent characteristics. The 5 MeV electron irradiations had only a marginal effect on the charge distribution, current flow, and electroluminescence of LEDs for electron fluences up to 4.5 × 1016 e/cm2 that cause very strong degradation in green, blue, and near-UV LEDs. This lack of changes is attributed to the much higher charge densities in quantum-wells (QWs) and quantum barriers (QBs) of the 270 nm LEDs and to higher bond strength in high Al mole fraction AlGaN layers. By contrast, irradiation with 1.1 MeV protons with a fluence of 1016 p/cm2 leads to more than two orders of magnitude decrease in charge density in the QWs and QBs, a strong increase in the series resistance, and the emergence of deep electron traps near Ec-0.5 eV. The difference is explained by a much higher density of primary defects produced by protons. The observed effects are compared to changes in performance caused by aging after high driving current.http://dx.doi.org/10.1063/5.0231390 |
| spellingShingle | A. Y. Polyakov L. A. Alexanyan I. V. Schemerov A. A. Vasilev A. V. Chernykh Anton Ivanov Nadezhda Talnishnikh Anton Chernyakov A. L. Zakgeim N. M. Shmidt P. B. Lagov A. S. Doroshkevich R. Sh. Isayev Yu. S. Pavlov Hsiao-Hsuan Wan Fan Ren S. J. Pearton Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation APL Materials |
| title | Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation |
| title_full | Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation |
| title_fullStr | Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation |
| title_full_unstemmed | Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation |
| title_short | Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation |
| title_sort | point defect effects in algan 270 nm light emitting diodes introduced by mev electron and proton irradiation |
| url | http://dx.doi.org/10.1063/5.0231390 |
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