Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation

Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation

Point defects were controllably introduced into 270 nm AlGaN Light-Emitting Diodes (LEDs) by 5 MeV electron and 1.1 MeV proton irradiations to examine the effect on electrical and luminescent characteristics. The 5 MeV electron irradiations had only a marginal effect on the charge distribution, curr...

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Main Authors: A. Y. Polyakov, L. A. Alexanyan, I. V. Schemerov, A. A. Vasilev, A. V. Chernykh, Anton Ivanov, Nadezhda Talnishnikh, Anton Chernyakov, A. L. Zakgeim, N. M. Shmidt, P. B. Lagov, A. S. Doroshkevich, R. Sh. Isayev, Yu. S. Pavlov, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Format: Article
Language:English
Published: AIP Publishing LLC 2024-12-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0231390
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http://dx.doi.org/10.1063/5.0231390

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