Modification of radiation defects in Si and Ge by background impurity
Model of modification of basic levels of the known radiation defects in silicon and a germanium is offered. Energy of Hubbard is independent of number of electrons on radiation defect, and its size depends on base-line admixtures near-by vacancy defect. If near-by vacancy defect of the interstitial...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2013-12-01
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| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/14.4/Articles_Pdf/jnpae-2013-14-0377-Dolgolenko.pdf |
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