Ferroelectric switching of quantum anomalous Hall effects in MnBi2Te4 films

Abstract The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in the heterostructure formed by interfacing MnBi2Te4...

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Bibliographic Details
Main Authors: Jiaheng Li, Quansheng Wu, Hongming Weng
Format: Article
Language:English
Published: Nature Portfolio 2025-08-01
Series:npj Quantum Materials
Online Access:https://doi.org/10.1038/s41535-025-00800-4
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