Bi2O2Se/Ta2NiSe5 Tunneling Heterojunction for High‐Performance, Polarization‐Sensitive, and Broadband Infrared Photodetector

Bi2O2Se/Ta2NiSe5 Tunneling Heterojunction for High‐Performance, Polarization‐Sensitive, and Broadband Infrared Photodetector

Abstract New technologies such as autonomous driving, and machine vision keep pushing the photodetectors to acquire a comprehensive high performance including high responsivity, fast response, low detection limit, polarization sensitivity, and broadband photoresponse. 2D van der Waals (vdW) heterost...

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Bibliographic Details
Main Authors: Fang Yang, Yuanfang Yu, Xinglei Zhang, Zhihao Qu, Zhaofu Chen, Shizheng Wang, Yinan Wang, Ting Zheng, Weiwei Zhao, Junpeng Lu, Hongwei Liu
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
Series:Advanced Electronic Materials
Subjects:
Bi2O2Se/Ta2NiSe5
heterojunction
optoelectronics
tunneling effect
Online Access:https://doi.org/10.1002/aelm.202500115
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https://doi.org/10.1002/aelm.202500115

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