Ab Initio Modelling of Interaction of the Edge Dislocation with Oxygen and Carbon Impurity Atoms in Silicon
Ab initio calculation of interaction of the edge dislocation with oxygen and carbon impurity atoms in supercell composed of 180 Si atoms are presented. The density functional theory in the general gradient approximation has been used for numerical calculation. The interaction curves of edge dislocat...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-07-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04025.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|