Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+δ ‐Based Memristive Devices

Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+δ ‐Based Memristive Devices

Abstract Valence change memory devices, based on redox reactions and oxygen dynamics, are considered to be one of the most promising candidates for the next generation of non‐volatile memory devices and neuromorphic architectures. Devices based on La2NiO4+δ have demonstrated analog resistive switchi...

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Main Authors: Thoai‐Khanh Khuu, Aleksandra Koroleva, Carlos Moncasi, Alexander Stangl, David Cooper, Gauthier Lefèvre, Fabrice Wilhelm, Andrei Rogalev, Matthieu Weber, Carmen Jiménez, Mónica Burriel
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
in‐situ TEM
La2NiO4+δ
operando XANES
resistive switching mechanism
valence change memory
Online Access:https://doi.org/10.1002/aelm.202400313
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https://doi.org/10.1002/aelm.202400313

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