Boron as a passivating dopant of oxygen-vacancy-induced hole traps at GaN/SiO2 interface
Recent experiments followed by our first-principles calculations have shown that heavily Mg-doped GaN epitaxial layers suppress hole traps due to oxygen vacancy V _O in the GaO _x interfacial layer at the GaN/SiO _2 interfaces, but leave a serious issue of controlling hole-concentration profiles. In...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adece5 |
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| Summary: | Recent experiments followed by our first-principles calculations have shown that heavily Mg-doped GaN epitaxial layers suppress hole traps due to oxygen vacancy V _O in the GaO _x interfacial layer at the GaN/SiO _2 interfaces, but leave a serious issue of controlling hole-concentration profiles. In this Letter, we demonstrate from first-principles calculations that B at the Ga site forms complexes with V _O at the interface and consequently annihilates the hole traps, opening a possibility of passivating these traps without degrading the controllability of the hole-density profiles. The microscopic reason behind the passivation phenomenon is clarified to be the formation of π bonding. |
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| ISSN: | 1882-0786 |