Boron as a passivating dopant of oxygen-vacancy-induced hole traps at GaN/SiO2 interface
Recent experiments followed by our first-principles calculations have shown that heavily Mg-doped GaN epitaxial layers suppress hole traps due to oxygen vacancy V _O in the GaO _x interfacial layer at the GaN/SiO _2 interfaces, but leave a serious issue of controlling hole-concentration profiles. In...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adece5 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|