The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures

The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures

The thermal through-silicon-via (TTSV) has a serious thermal stress problem due to the mismatch of the coefficient of thermal expansion between the Si substrate and filler metal. At present, the thermal stress characteristics and strain mechanism of TTSV are mainly concerned with increases in temper...

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Bibliographic Details
Main Authors: Wenting Xie, Xiaoting Chen, Liting Zhang, Xiangjun Lu, Bing Ding, An Xie
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Micromachines
Subjects:
ultra-low temperature
through-silicon-via
thermal stress
carrier mobility
saturation current
threshold voltage
Online Access:https://www.mdpi.com/2072-666X/16/2/221
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