Numerical Analysis of Diameter Dependency of Control Coefficient of Carbon Nanotube Field Effect Transistor

Numerical Analysis of Diameter Dependency of Control Coefficient of Carbon Nanotube Field Effect Transistor

This study examines the behavior of carbon nanotube field effect transistors under ballistic conditions by analyzing the effect of gate (α_G) and drain (α_D) control coefficient modifications on the device's diameter. The effect of α_G and α_D on the outcome of CNTFETs has been thoroughly i...

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Bibliographic Details
Main Authors: Shaeekul Ameen, Sayed Farhan, Farhun Monsur, Faysal Nayan
Format: Article
Language:English
Published: OICC Press 2024-06-01
Series:Majlesi Journal of Electrical Engineering
Subjects:
ballistic
drain control coefficients
Gate control coefficients
Quantum capacitance
sub-threshold swing
Transconductance
Online Access:https://oiccpress.com/mjee/article/view/7984
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