An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors
An analytical surface potential based universal model for the drain current voltage characteristics of Symmetric Double gate (DG) junctionless field effect transistors is presented. This novel universal model is valid for all operating regions from depletion to inversion regions of operations. The p...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2016-06-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02003.pdf |
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