Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the impossibility of the erase operation. To addr...

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Main Authors: Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Small Structures
Subjects:
3D NAND flash memories
atomic layer deposition
crystallinity
gate‐induced drain leakage erase operation
hybrid channel (poly‐Si/In–Ga–O)
Online Access:https://doi.org/10.1002/sstr.202400495
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https://doi.org/10.1002/sstr.202400495

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