Numerical simulation of heat distribution of silicon carbide growth by PVT method with inner rod
The physical vapor transport (PVT) method has been widely used in the growth of silicon carbide single crystals. In designing the growth system, effective thermal management is crucial, particularly regarding the temperature of the growth surface and the horizontal and vertical temperature gradients...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/add08a |
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