On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

Abstract In this work, a scalable technique is presented for the direct growth of tungsten disulfide (WS2) utilized in back‐gated field‐effect transistors (FETs), demonstrating robust and persistent p‐type behavior across diverse conditions. Notably, this p‐type behavior is consistently observed reg...

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Bibliographic Details
Main Authors: Carlos Marquez, Farzan Gity, Jose C. Galdon, Alberto Martinez, Norberto Salazar, Lida Ansari, Hazel Neill, Luca Donetti, Francisco Lorenzo, Manuel Caño‐Garcia, Ruben Ortega, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Francisco Gamiz
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
Series:Advanced Electronic Materials
Subjects:
chemical vapor deposition (CVD)
density functional theory (DFT)
P‐type transistors
tungsten disulfide (WS2)
2D materials
Online Access:https://doi.org/10.1002/aelm.202500079
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https://doi.org/10.1002/aelm.202500079

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