Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition
Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysi...
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Wiley
2010-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2010/923409 |
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| author | A. H. Ramelan H. Harjana P. Arifin |
| author_facet | A. H. Ramelan H. Harjana P. Arifin |
| author_sort | A. H. Ramelan |
| collection | DOAJ |
| description | Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3, Sb2O3, and Ga2O5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high. |
| format | Article |
| id | doaj-art-8fe64bff6f884bc68bb816e5887e666f |
| institution | OA Journals |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2010-01-01 |
| publisher | Wiley |
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| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-8fe64bff6f884bc68bb816e5887e666f2025-08-20T02:09:29ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422010-01-01201010.1155/2010/923409923409Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour DepositionA. H. Ramelan0H. Harjana1P. Arifin2Physics Department, Research Centre for Smart Materials and Energy, Faculty of Mathematics and Natural Sciences (FMIPA), Sebelas Maret University (UNS), Jl. Ir. Sutami no. 36A, Surakarta 57126, IndonesiaPhysics Department, Research Centre for Smart Materials and Energy, Faculty of Mathematics and Natural Sciences (FMIPA), Sebelas Maret University (UNS), Jl. Ir. Sutami no. 36A, Surakarta 57126, IndonesiaPhysics Department, Electronic Materials Laboratory, Faculty of Mathematics and Natural Sciences (FMIPA), Bandung Institute of Technology (ITB), Jl. Ganesha no. 10, Bandung 40132, IndonesiaEpitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3, Sb2O3, and Ga2O5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.http://dx.doi.org/10.1155/2010/923409 |
| spellingShingle | A. H. Ramelan H. Harjana P. Arifin Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition Advances in Materials Science and Engineering |
| title | Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition |
| title_full | Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition |
| title_fullStr | Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition |
| title_full_unstemmed | Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition |
| title_short | Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition |
| title_sort | growth of algasb compound semiconductors on gaas substrate by metalorganic chemical vapour deposition |
| url | http://dx.doi.org/10.1155/2010/923409 |
| work_keys_str_mv | AT ahramelan growthofalgasbcompoundsemiconductorsongaassubstratebymetalorganicchemicalvapourdeposition AT hharjana growthofalgasbcompoundsemiconductorsongaassubstratebymetalorganicchemicalvapourdeposition AT parifin growthofalgasbcompoundsemiconductorsongaassubstratebymetalorganicchemicalvapourdeposition |