Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition
Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysi...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2010-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2010/923409 |
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