Research on dV/dt Reliability Mechanism of 4 H-SiC PiN Power Diode
Silicon carbide (SiC) power switches have the advantages of high-speed and high-power, which leads to more severe high dV/dt reliability issues than silicon (Si) devices in pulsed power systems. It has been verified by experiments that high dV/dt stress will cause permanent degradation of the breakd...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
State Grid Energy Research Institute
2021-12-01
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| Series: | Zhongguo dianli |
| Subjects: | |
| Online Access: | https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202107043 |
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