Silicon Based GeSn p-i-n Photodetector for SWIR Detection
We reported an investigation of GeSn-based p-i-n photodetectors (PDs) with a <inline-formula> <tex-math notation="LaTeX">${\rm{Ge}}_{{\rm{0.92}}}{\rm{Sn}}_{{\rm{0.08}}}$</tex-math></inline-formula> active layer grown on n-type Si (100) substrate using molecular beam...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7563433/ |
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