Effect of Pressure and Temperature on Preparing PZT Films

Ferroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) te...

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Main Author: Sharif Musameh
Format: Article
Language:English
Published: An-Najah National University 2002-01-01
Series:مجلة جامعة النجاح للأبحاث العلوم الطبيعية
Online Access:https://journals.najah.edu/media/journals/full_texts/effect-pressure-and-temperature-preparing-pzt-films.pdf
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_version_ 1849240089499009024
author Sharif Musameh
author_facet Sharif Musameh
author_sort Sharif Musameh
collection DOAJ
description Ferroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) textured PZT films could be grown with careful selection of ablation conditions which are: the oxygen pressure is 300 mT, substrate temperature is 605 C and the ablation time is 16 minutes.
format Article
id doaj-art-8e167d2721244fb38f5cb854908d47bb
institution Kabale University
issn 1727-2114
2311-8865
language English
publishDate 2002-01-01
publisher An-Najah National University
record_format Article
series مجلة جامعة النجاح للأبحاث العلوم الطبيعية
spelling doaj-art-8e167d2721244fb38f5cb854908d47bb2025-08-20T04:00:44ZengAn-Najah National Universityمجلة جامعة النجاح للأبحاث العلوم الطبيعية1727-21142311-88652002-01-011629110110.35552/anujr.a.16.2.657Effect of Pressure and Temperature on Preparing PZT FilmsSharif Musameh0NoneFerroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) textured PZT films could be grown with careful selection of ablation conditions which are: the oxygen pressure is 300 mT, substrate temperature is 605 C and the ablation time is 16 minutes.https://journals.najah.edu/media/journals/full_texts/effect-pressure-and-temperature-preparing-pzt-films.pdf
spellingShingle Sharif Musameh
Effect of Pressure and Temperature on Preparing PZT Films
مجلة جامعة النجاح للأبحاث العلوم الطبيعية
title Effect of Pressure and Temperature on Preparing PZT Films
title_full Effect of Pressure and Temperature on Preparing PZT Films
title_fullStr Effect of Pressure and Temperature on Preparing PZT Films
title_full_unstemmed Effect of Pressure and Temperature on Preparing PZT Films
title_short Effect of Pressure and Temperature on Preparing PZT Films
title_sort effect of pressure and temperature on preparing pzt films
url https://journals.najah.edu/media/journals/full_texts/effect-pressure-and-temperature-preparing-pzt-films.pdf
work_keys_str_mv AT sharifmusameh effectofpressureandtemperatureonpreparingpztfilms