High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn
Abstract GeSn has gained significant interest as a material for next‐generation electronic devices, including thin‐film transistors (TFTs) because of its excellent electronic properties. In this study, high‐quality polycrystalline GeSn thin films are fabricated on glass substrates and fabricated hig...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400901 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|