Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density
Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density output relative to a-IGZO source-gated transistor...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-01-01
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| Series: | Electronic Materials |
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| Online Access: | https://www.mdpi.com/2673-3978/6/1/2 |
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| author | Jiaxin Liu Shan Huang Zhenyuan Xiao Ning Li Jaekyun Kim Jidong Jin Jiawei Zhang |
| author_facet | Jiaxin Liu Shan Huang Zhenyuan Xiao Ning Li Jaekyun Kim Jidong Jin Jiawei Zhang |
| author_sort | Jiaxin Liu |
| collection | DOAJ |
| description | Amorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density output relative to a-IGZO source-gated transistors (SGTs). Device performances are analyzed using technology computer-aided design (TCAD) simulations. The TCAD simulation results reveal that, with an optimized device structure, the current density of the wrapping a-IGZO transistor can reach 7.34 μA/μm, representing an approximate two-fold enhancement compared to that of the a-IGZO SGT. Furthermore, the optimized wrapping a-IGZO transistor exhibits clear flat saturation and pinch-off behavior. The proposed wrapping a-IGZO transistors show significant potential for applications in large-area electronics. |
| format | Article |
| id | doaj-art-8d3e904b853c43828362aa83524ba1b4 |
| institution | OA Journals |
| issn | 2673-3978 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronic Materials |
| spelling | doaj-art-8d3e904b853c43828362aa83524ba1b42025-08-20T02:11:01ZengMDPI AGElectronic Materials2673-39782025-01-0161210.3390/electronicmat6010002Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current DensityJiaxin Liu0Shan Huang1Zhenyuan Xiao2Ning Li3Jaekyun Kim4Jidong Jin5Jiawei Zhang6Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250100, ChinaDepartment of Electronic and Computer Engineering, The Hongkong University of Science and Technology, Hongkong, ChinaDepartment of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of KoreaDepartment of Electrical and Electronic Engineering, Hanyang University, Ansan 15588, Republic of KoreaDepartment of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of KoreaDepartment of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of KoreaShandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250100, ChinaAmorphous oxide semiconductor transistors with a high current density output are highly desirable for large-area electronics. In this study, wrapping amorphous indium-gallium-zinc-oxide (a-IGZO) transistors are proposed to enhance the current density output relative to a-IGZO source-gated transistors (SGTs). Device performances are analyzed using technology computer-aided design (TCAD) simulations. The TCAD simulation results reveal that, with an optimized device structure, the current density of the wrapping a-IGZO transistor can reach 7.34 μA/μm, representing an approximate two-fold enhancement compared to that of the a-IGZO SGT. Furthermore, the optimized wrapping a-IGZO transistor exhibits clear flat saturation and pinch-off behavior. The proposed wrapping a-IGZO transistors show significant potential for applications in large-area electronics.https://www.mdpi.com/2673-3978/6/1/2amorphous indium–gallium–zinc oxidethin-film transistorsource-gated transistorwrapping transistorcurrent density |
| spellingShingle | Jiaxin Liu Shan Huang Zhenyuan Xiao Ning Li Jaekyun Kim Jidong Jin Jiawei Zhang Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density Electronic Materials amorphous indium–gallium–zinc oxide thin-film transistor source-gated transistor wrapping transistor current density |
| title | Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density |
| title_full | Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density |
| title_fullStr | Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density |
| title_full_unstemmed | Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density |
| title_short | Wrapping Amorphous Indium-Gallium-Zinc-Oxide Transistors with High Current Density |
| title_sort | wrapping amorphous indium gallium zinc oxide transistors with high current density |
| topic | amorphous indium–gallium–zinc oxide thin-film transistor source-gated transistor wrapping transistor current density |
| url | https://www.mdpi.com/2673-3978/6/1/2 |
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