Ultra-highly efficient InGaN green mini-light-emitting diodes with a peak external quantum efficiency of 65% with Al-treatment on the InGaN quantum wells
We demonstrate ultra-high luminous efficacy InGaN-based green mini-light-emitting diodes (mini-LEDs) grown on c-plane patterned sapphire substrates using metal organic chemical vapor deposition (MOCVD). An Al-treatment technique was developed during multiple quantum wells (MQWs) growth. The Al-treat...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adf593 |
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