Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays

Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. But the mechanism of the synergistic radiation effect between the two rays is still unclear. Based on TCAD, the synergistic radiation effects of ionizing/displacement damage...

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Main Authors: Yuhao Shan, Yanfei Liu, Hao Zheng, Zheng Peng
Format: Article
Language:English
Published: Wiley 2022-01-01
Series:Science and Technology of Nuclear Installations
Online Access:http://dx.doi.org/10.1155/2022/1283926
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author Yuhao Shan
Yanfei Liu
Hao Zheng
Zheng Peng
author_facet Yuhao Shan
Yanfei Liu
Hao Zheng
Zheng Peng
author_sort Yuhao Shan
collection DOAJ
description Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. But the mechanism of the synergistic radiation effect between the two rays is still unclear. Based on TCAD, the synergistic radiation effects of ionizing/displacement damage caused by mixed neutrons and gamma rays are simulated. The results demonstrate that the synergistic effects are more serious than the simple sum of the two radiation effects due to their mutual enhancement. The change of the carrier recombination rate in the device at different positions shows that the displacement effects increase the peak value of surface recombination rate; meanwhile, the ionizing dose effects enhance the recombination process in bulk silicon. The mechanism of this phenomenon is that positive charges from the oxide layer and interface enhance the recombination of carriers in bulk, and the reduced carrier lifetime caused by defects from bulk makes carriers more likely to be trapped by the interface traps. In addition, the simulation result which shows the influence of temperature on the synergistic effects indicates that the synergistic effects are more sensitive to the lower temperature.
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institution Kabale University
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language English
publishDate 2022-01-01
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series Science and Technology of Nuclear Installations
spelling doaj-art-8c05948318a14cfca19300d705b065732025-02-03T06:11:18ZengWileyScience and Technology of Nuclear Installations1687-60832022-01-01202210.1155/2022/1283926Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma RaysYuhao Shan0Yanfei Liu1Hao Zheng2Zheng Peng3Xi’an High-Tech Research InstituteXi’an High-Tech Research InstituteXi’an High-Tech Research InstituteXi’an High-Tech Research InstituteTransistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. But the mechanism of the synergistic radiation effect between the two rays is still unclear. Based on TCAD, the synergistic radiation effects of ionizing/displacement damage caused by mixed neutrons and gamma rays are simulated. The results demonstrate that the synergistic effects are more serious than the simple sum of the two radiation effects due to their mutual enhancement. The change of the carrier recombination rate in the device at different positions shows that the displacement effects increase the peak value of surface recombination rate; meanwhile, the ionizing dose effects enhance the recombination process in bulk silicon. The mechanism of this phenomenon is that positive charges from the oxide layer and interface enhance the recombination of carriers in bulk, and the reduced carrier lifetime caused by defects from bulk makes carriers more likely to be trapped by the interface traps. In addition, the simulation result which shows the influence of temperature on the synergistic effects indicates that the synergistic effects are more sensitive to the lower temperature.http://dx.doi.org/10.1155/2022/1283926
spellingShingle Yuhao Shan
Yanfei Liu
Hao Zheng
Zheng Peng
Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays
Science and Technology of Nuclear Installations
title Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays
title_full Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays
title_fullStr Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays
title_full_unstemmed Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays
title_short Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays
title_sort simulation of ionizing displacement synergistic effects on npn bipolar transistors irradiated by mixed neutrons and gamma rays
url http://dx.doi.org/10.1155/2022/1283926
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