Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays

Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. But the mechanism of the synergistic radiation effect between the two rays is still unclear. Based on TCAD, the synergistic radiation effects of ionizing/displacement damage...

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Bibliographic Details
Main Authors: Yuhao Shan, Yanfei Liu, Hao Zheng, Zheng Peng
Format: Article
Language:English
Published: Wiley 2022-01-01
Series:Science and Technology of Nuclear Installations
Online Access:http://dx.doi.org/10.1155/2022/1283926
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