Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering
In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
|
| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2012/902649 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832564414103945216 |
|---|---|
| author | S. P. Dash D. Goll P. Kopold H. D. Carstanjen |
| author_facet | S. P. Dash D. Goll P. Kopold H. D. Carstanjen |
| author_sort | S. P. Dash |
| collection | DOAJ |
| description | In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces were prepared in three different ways: by evaporation at room temperature, low temperature (−60∘C), and with Sb as surfactant, and their interface structures were analyzed by high-resolution RBS (HRBS). In all cases more or less strong in-diffusion of Co with subsequent silicide formation was observed. In order to prevent the mixing of Co and Si, ultra thin MgO tunnel barriers were introduced in-between them. In situ HRBS characterization confirms that the MgO films were very uniform and prevented the mixing of the Si substrate with deposited Co and Fe films effectively, even at 450∘C. |
| format | Article |
| id | doaj-art-8bb116f5fc5948219810a8abee759c8e |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-8bb116f5fc5948219810a8abee759c8e2025-02-03T01:11:09ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422012-01-01201210.1155/2012/902649902649Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford BackscatteringS. P. Dash0D. Goll1P. Kopold2H. D. Carstanjen3Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 Göteborg, SwedenMax Planck Institute for Intelligent Systems (Formerly Max Planck Institute for Metals Research), Heisenbergstrβe. 3, 70569 Stuttgart, GermanyMax Planck Institute for Intelligent Systems (Formerly Max Planck Institute for Metals Research), Heisenbergstrβe. 3, 70569 Stuttgart, GermanyMax Planck Institute for Intelligent Systems (Formerly Max Planck Institute for Metals Research), Heisenbergstrβe. 3, 70569 Stuttgart, GermanyIn order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces were prepared in three different ways: by evaporation at room temperature, low temperature (−60∘C), and with Sb as surfactant, and their interface structures were analyzed by high-resolution RBS (HRBS). In all cases more or less strong in-diffusion of Co with subsequent silicide formation was observed. In order to prevent the mixing of Co and Si, ultra thin MgO tunnel barriers were introduced in-between them. In situ HRBS characterization confirms that the MgO films were very uniform and prevented the mixing of the Si substrate with deposited Co and Fe films effectively, even at 450∘C.http://dx.doi.org/10.1155/2012/902649 |
| spellingShingle | S. P. Dash D. Goll P. Kopold H. D. Carstanjen Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering Advances in Materials Science and Engineering |
| title | Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering |
| title_full | Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering |
| title_fullStr | Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering |
| title_full_unstemmed | Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering |
| title_short | Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering |
| title_sort | tunnel contacts for spin injection into silicon the si co interface with and without a mgo tunnel barrier a study by high resolution rutherford backscattering |
| url | http://dx.doi.org/10.1155/2012/902649 |
| work_keys_str_mv | AT spdash tunnelcontactsforspininjectionintosiliconthesicointerfacewithandwithoutamgotunnelbarrierastudybyhighresolutionrutherfordbackscattering AT dgoll tunnelcontactsforspininjectionintosiliconthesicointerfacewithandwithoutamgotunnelbarrierastudybyhighresolutionrutherfordbackscattering AT pkopold tunnelcontactsforspininjectionintosiliconthesicointerfacewithandwithoutamgotunnelbarrierastudybyhighresolutionrutherfordbackscattering AT hdcarstanjen tunnelcontactsforspininjectionintosiliconthesicointerfacewithandwithoutamgotunnelbarrierastudybyhighresolutionrutherfordbackscattering |