Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces...

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Bibliographic Details
Main Authors: S. P. Dash, D. Goll, P. Kopold, H. D. Carstanjen
Format: Article
Language:English
Published: Wiley 2012-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2012/902649
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