Investigation of temperature-dependent performance degradation in AlGaN/InGaN/GaN HEMTs: Implications for device reliability and efficiency
This paper comprehensively analyzes the temperature-dependent performance of an AlGaN/InGaN/GaN high electron mobility transistor. Thermal simulations were conducted to evaluate the impact of both model temperature and lattice temperature on device performance. Simulated DC characteristics are valid...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0271310 |
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