2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface

2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface

This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a secondary passivation layer Si3N4 deposited by PECVD. Aft...

Full description

Saved in:
Bibliographic Details
Main Authors: Bing Qiao, Pengfei Dai, Xinxin Yu, Zhonghui Li, Ran Tao, Jianjun Zhou, Rui Shen, Tangsheng Chen
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Hydrogen-terminated
(111)-oriented diamond
output power
Online Access:https://ieeexplore.ieee.org/document/10373932/
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350&#x00B0;C as well as a secondary passivation layer Si3N4 deposited by PECVD. After passivation, a low ohmic contact resistance <inline-formula> <tex-math notation="LaTeX">$R_{c}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$0.5 \Omega \cdot $ </tex-math></inline-formula>mm was obtained and the 2DHG sheet density was as high as <inline-formula> <tex-math notation="LaTeX">$1.0\times 10\,\,^{\mathrm{ 13}}\,\,{\mathrm{ cm}}^{-2}$ </tex-math></inline-formula> with a corresponding mobility of <inline-formula> <tex-math notation="LaTeX">$104 {\mathrm{ cm}}^{2} /\text{V}\cdot \text{s}$ </tex-math></inline-formula>. The fabricated diamond MOSFET with gate length of <inline-formula> <tex-math notation="LaTeX">$0.5 ~\mu \text{m}$ </tex-math></inline-formula> showcased a high current density of 750 mA/mm, a low on-resistance of <inline-formula> <tex-math notation="LaTeX">$24 \Omega \cdot $ </tex-math></inline-formula>mm, and a high off-state breakdown voltage of 117 V. Thanks to the high current density and low on-resistance, a record high output power density of 2.1 W/mm was achieved at 10 GHz with drain biased at a low voltage of &#x2212;30 V. These results demonstrate that the output current and output power can be improved by using a (111)-oriented diamond, which is benefit for high-frequency and high-power RF devices.
ISSN:2168-6734

Similar Items