First-principles study of novel triple-gate field-effect transistors based on 2D TMDs
With the increase of integration, the smaller the scale of FETs, the performance of silicon-based FETs will be limited, and two-dimensional FETs will become inevitable. In this paper, the transfer characteristics and performances of 5.1 nm, 6.1 nm 1 T/2H/1 T MoTe2 and WSe2 single-layer dual-gate Sch...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-01-01
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| Series: | Next Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2949822824002004 |
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| Summary: | With the increase of integration, the smaller the scale of FETs, the performance of silicon-based FETs will be limited, and two-dimensional FETs will become inevitable. In this paper, the transfer characteristics and performances of 5.1 nm, 6.1 nm 1 T/2H/1 T MoTe2 and WSe2 single-layer dual-gate Schottky barrier field effect transistor (D-SBFET) were discussed, and it was found that only the ON-state current of 6.1 nm MoTe2-D-SBFET met the ON-state current requirement of ITRS, and the others were all lower than ITRS requirement. In order to improve the ON-state current, a new layered triple-gate structure SBFET (T-SBFET) was constructed. The study found that the new T-SBFET increases the ON-state current due to the increase of its transport coefficient, and the performance of all 5.1 nm and 6.1 nm MoTe2-T-SBFETs or WSe2-T-SBFETs meet the requirements of ITRS. This study shows that it is a good method to construct a triple-gate structure to increase the ON-state current of two-dimensional devices. |
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| ISSN: | 2949-8228 |