First-principles study of novel triple-gate field-effect transistors based on 2D TMDs
With the increase of integration, the smaller the scale of FETs, the performance of silicon-based FETs will be limited, and two-dimensional FETs will become inevitable. In this paper, the transfer characteristics and performances of 5.1 nm, 6.1 nm 1 T/2H/1 T MoTe2 and WSe2 single-layer dual-gate Sch...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-01-01
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| Series: | Next Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2949822824002004 |
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