Antiphase boundary-free III–V materials epitaxially grown on on-axis silicon (001) substrates by ultra-thin silicon buffer

Antiphase boundary-free III–V materials epitaxially grown on on-axis silicon (001) substrates by ultra-thin silicon buffer

The direct epitaxy of III–V materials on CMOS-compatible on-axis Si (001) is vital for scalable, cost-effective optoelectronic devices. However, material dissimilarities introduce crystal defects, such as antiphase boundaries (APBs) and threading dislocations (TDs), impairing performance. This study...

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Main Authors: Xuanchang Zhang, Huiwen Deng, Haotian Zeng, Hui Jia, Mengxun Bai, Danqi Lei, Hexing Wang, Liwei Cao, Junjie Yang, Taylor Stock, Wei Li, Siming Chen, Alwyn Seeds, Huiyun Liu, Mingchu Tang
Format: Article
Language:English
Published: AIP Publishing LLC 2025-04-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0259915
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http://dx.doi.org/10.1063/5.0259915

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