Design of SiC MOSFET half-bridge driver and protection circuit
In response to the challenges in designing silicon carbide (SiC) MOSFET driving circuits, such as high difficulty in design, susceptibility to crosstalk, incomplete protective functions, and the issue of full domestic production, a half-bridge driving and protection circuit for silicon carbide MOSFE...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2025-03-01
|
| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000170824 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|