Improvement of Mosfet Characteristics
By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent circuit models are developed. Also, the high frequency behaviour is explained by a model and the behavio...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1990-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1990/78629 |
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| Summary: | By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated
circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent
circuit models are developed. Also, the high frequency behaviour is explained by a model and the
behaviour of a T-MOSFET under different conditions is given. |
|---|---|
| ISSN: | 0882-7516 1563-5031 |